Global Photoresist & Photoresist Ancillaries Market size was valued at USD 3.71 Billion in and is projected to reach USD 5.91 Billion by , growing at a CAGR of 6% from to .
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The key market dynamics that are shaping the Global photoresist & photoresist ancillaries market include:
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Here is a more detailed regional analysis of the global photoresist & photoresist ancillaries market include:
The Global Photoresist & Photoresist Ancillaries Market is segmented into By Type, By End-User, By Application, and By Geography.
Based on Type, the Global Photoresist & Photoresist Ancillaries Market is segmented into Positive, Negative, Dry Film Photoresist. Positive photoresists dominate as they are widely used in semiconductor manufacturing, giving excellent resolution for fine patterning at smaller nodes, which is required for current chip fabrication. Negative photoresists are growing due to their advantages in applications such as mems and 3D packaging, where they provide greater resolution and improved etch resistance.
Based on End-User, the Global Photoresist & Photoresist Ancillaries Market is segmented into Semiconductors, Printed Circuit Boards, Displays. Semiconductors dominate the market, driven by rising demand for improved chips in electronics, 5G, and AI, which necessitate high-performance photoresists for precision lithography. Printed circuit boards (PCBs) are the fastest-growing segment, owing to rising demand in the consumer electronics and automotive industries, where sophisticated photoresists are essential for high-performance boards.
Based on Application, the Global Photoresist & Photoresist Ancillaries Market is segmented into Photolithography, Solder Mask, Etching. Photolithography dominates due to its importance in semiconductor manufacturing, where high-resolution photoresists are required to create detailed circuit designs on silicon wafers. Solder mask applications are quickly expanding, driven by rising demand for PCB fabrication, where accurate photoresists protect components during soldering and improve board performance.
Based on Geography, the Global Photoresist & Photoresist Ancillaries Market is segmented into Asia-Pacific and North America. Asia-Pacific is one of the dominating region in the Global Photoresist & Photoresist Ancillaries Market driven by China, Japan, Taiwan, and South Korea, the world's leading producers of semiconductors. North America is emerging as the fastest growing region in the Global Photoresist & Photoresist Ancillaries Market. With a projected value of $300 Billion in , the U.S. semiconductor industry is the main driver of the photoresist market's quickest growth in North America.
The “Global Photoresist & Photoresist Ancillaries Market” study report will provide valuable insight with an emphasis on the global market. The major players in the market are JSR Corporation, Tokyo Ohka Kogyo Co, Ltd., Shin Etsu Chemical Co., Ltd., Sumitomo Chemical Co., Limited., DuPont, Merck Group, Shintech, LG Chem, Hubei Xingfa Chemicals Group Co., Ltd., Samsung Electronics.
Our market analysis also entails a section solely dedicated to such major players wherein our analysts provide an insight into the financial statements of all the major players, along with its product benchmarking and SWOT analysis. The competitive landscape section also includes key development strategies, market share, and market ranking analysis of the above-mentioned players.
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• Qualitative and quantitative analysis of the market based on segmentation involving both economic as well as non-economic factors • Provision of market value (USD Billion) data for each segment and sub-segment • Indicates the region and segment that is expected to witness the fastest growth as well as to dominate the market • Analysis by geography highlighting the consumption of the product/service in the region as well as indicating the factors that are affecting the market within each region • Competitive landscape which incorporates the market ranking of the major players, along with new service/product launches, partnerships, business expansions, and acquisitions in the past five years of companies profiled • Extensive company profiles comprising of company overview, company insights, product benchmarking, and SWOT analysis for the major market players • The current as well as the future market outlook of the industry with respect to recent developments which involve growth opportunities and drivers as well as challenges and restraints of both emerging as well as developed regions • Includes in-depth analysis of the market of various perspectives through Porter’s five forces analysis • Provides insight into the market through Value Chain • Market dynamics scenario, along with growth opportunities of the market in the years to come • 6-month post-sales analyst support
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HF etching is a very demanding. HF doesn´t attack the resist. But it can diffuse under the photoresist and lift it from below causing bad adhesion of the resist on the substrate. This is why a film thickness as high as possible should be chosen, and the resist should be hardened (stronger prebake + hardbake). Nevertheless it depends strongly on the HF concentration and the etch time to what extend the photoresist sustains the etching.
In the literature it is mentioned that ma-P is suitable for etching with buffered HF [*].
[*] A. Pozzato, S. Dal Zilio, G. Fois, D. Vendramin, G. Mistura, M. Belotti, Y. Chen, M. Natali, Microelectronic Eng. 83 (), 884-888, doi:10./j.mee..01.012
For lift-off processes a bi-layer resist system can be applied. E.g. LOR (a not photosensitive polymer provided by MicroChem Corp. for various film thicknesses) can be used as bottom layer. In a second step a positive resist e.g. from the ma-P series is applied as top layer. During the aqueous-alkaline development of the exposed areas of the positive resist film also the LOR film underneath is dissolved. The undercut profile in the bottom layer is adjusted by varying the development time and the prebake conditions for the LOR layer.
For some applications you can do the lift-off with a single-layer resist which does not give an undercut profile. E.g. the use of ma-P resist without an additional bottom layer would be sufficient – preferably with a somewhat higher film thickness to give sidewalls that can be reached by the stripper. The quality of the edges of the deposited metal layer is slightly worse than in a bi-layer process in this case.
[1] W. Schrott, M. Svoboda, Z. Slouka, D. Šnita, Metal electrodes in plastic microfluidic systems, Microelectronic Engineering, 86 (), -;
doi: 10./j.mee..01.001
ma-P is used as mould for electroplating Au and Cu structures to be used in plastic microfluidic systems.
[2] P.W. Leech, G.K. Reeves, A.S. Holland, Reactive ion etching of TiN, TiAlN, CrN and TiCN Films in CF4/O2 and CHF3/O2 Plasmas, Mater. Res. Soc. Symp. Proc. 890 (), -Y08-13.1-6;doi: 10./PROC--Y08-13
ma-P is used as etch mask for plasma etching in the manufacture of stamps for imprint lithography.
[3] G. Kaltsas, A. Petropoulos, K. Tsougeni, D. N. Pagonis, T. Speliotis, E. Gogolides, A. G. Nassiopoulou, A novel microfabrication technology on organic substrates – Application to a thermal flow sensor, Journal of Physics: Conference Series 92 () ; doi:10./-/92/1/
ma-P is used in a lift-off process with Pt deposition in the manufacture of a thermal flow sensor.
[4] J.-C. Galas, D. Bartolo, V. Studer, Active connectors for microfluidic drops on demand, New J. Phys. 11 () ;
doi:10./-/11/7/
After reflow ma-P HV is used as mask for moulding PDMS in the fabrication of active microfluidic connectors.
For the lithographic processing of the single layer resist systems ma-N 400 and ma-N less processing steps are necessary than for the bilayer system. The thermal stability of the ma-N is higher than that of the ma-N 400 series and of the bilayer system. In general, the resolution of both systems, the single layer and the bilayer system is comparable, but the resolution of the bilayer system can be slightly better.
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For clean lift-off processing, the resist film thickness should be 1.5 to 2 times that of the metal layer to be deposited.
In general the resists exhibit a good etch resistance.
The series gave good results in dry etching (e.g. with CF4 or high dry density SF6/ O2 plasma). The etch rates of the resists strongly depend on the etching conditions. The etching equipment has an influence, the amount of open wafer surface to be etched, the etch gas composition and all other parameters such as pressure, temperature or voltage.
If required, the etch resistance and thermal stability of the resist can be increased by applying a higher prebake temperature or a longer prebake time. The developing time will increase in this case. Hardbaking of the developed resist patterns is also recommended for an increase of the etch resistance and the thermals stability.
In general the etch selectivity can be assume for the most etch applications as 1 to 1.
We cannot deliver any more detailed data. This is nearly impossible since etching conditions can differ very much from lab to lab.
HF etching is a bit demanding. HF doesn´t attack the resist. But it can diffuse through and under the photoresist and lift it from below causing bad adhesion of the resist on the substrate. This is why a film thickness as high as possible should be chosen, and the resist should be hardened (stronger prebake + hardbake). Nevertheless it depends strongly on the HF concentration and the etch time how acceptably the photoresist sustains the etching.
There are some recommendations to avoid or reduce the electrostatic charging during e-beam exposure on insulating substrates.
1: Deposition of a thin metal layer as top coat layer:
Coat a thin metal layer (e.g. Al or Cr, ~ 10 – 20 nm) on top of the resist layer. The thin metal layer has to be removed after exposure and prior development.
In the case when using ma-N resist, the developer is aqueous alkaline based and the thin Al layer (which is soluble in weak alkaline solutions) is dissolved or removed during development step.
Thin Cr layer can be removed using e.g. Chrome Etch 18 solution.
2: Coat of a thin conductive layer.
[Ji] J. Ji et al “High-Throughput Nanohole Array Based System to Monitor Multiple Binding Events in Real Time” Anal. Chem. 80 () -
[Mohamed_1] K. Mohamed et al “Surface charging suppression using PEDOT/PSS in the fabrication of three dimensional structures on a quartz substrate” Microelectronic Engineering Vol. 86 () 535 – 538”
ma-N :
[Bilenberg] B. Bilenberg, M. Schøler, P. Shi, M. S. Schmidt, P. Bøggild, M. Fink, C. Schuster, F. Reuther, C. Gruetzner, A. Kristensen „Comparison of high resolution negative electron beam resists” J. Vac. Sci. Technol. B 24(4) ()
[Blideran] M.M. Blideran, M. Häffner, B.-E. Schuster, C. Raisch, H. Weigand, M. Fleischer, H. Peisert, T. Chassé, D.P. Kern „Improving etch selectivity and stability of novolak based negative resists by fluorine plasma treatment” Microelectronic Engineering 86 () 769–772
[Cardenas] J. Cardenas, C. B. Poitras, J. T. Robinson, K. Preston, L. Chen, M. Lipson “Low loss etchless silicon photonic waveguides” Optics Express Vol. 17, No 6 ()
[Chen] S. C. Chen, Y. C. Lin, J. C. Wu, L. Horng, C. H. Cheng „Parameter optimization for an ICP deep silicon etching system” Microsyst Technol () 13: 465–474
[Elsner_1] H. Elsner, H.-G. Meyer, A. Voigt, G. Gruetzner “Evaluation of the ma-N series DUV photoresists for the electron beam exposure“ Microelectron. Eng. 46 (), 389–392
[Elsner_2] H. Elsner, H.-G. Meyer “Nanometer and high aspect ratio patterning by electron beam lithography using simply DUV negative tone resists” Microelectronic Engineering Vol. 57-58 (), 291 – 296
[Gondarenko] A. Gondarenko, J. S. Levy, M. Lipson “High confinement micron-scale silicon nitride high Q ring resonator” Optics Express Vol. 17, No. 14 ()
[Konijn] M. Konijn, M.M. Alkaisi , R.J. Blaikie “Nanoimprint lithography of sub-100 nm 3D structures” Microelectronic Engineering 78–79 () 653–658
[Mohamed_2] K. Mohamed, M. M. Alkaisi, R. J. Blaikie “A Three-Dimensional Ultraviolet Curable Nanoimprint Lithography (3D UV-NIL)” American Institute of Physics (AIP) Conf. Proc. , () 114
[Verhagen] E. Verhagen, A. Polman, L. (Kobus) Kuipers “Nanofocusing in laterally tapered plasmonic waveguides” Optics Express Vol. 16, No. 1 () 45
[Voigt_1] A. Voigt, H. Elsner, H.-G. Meyer, G. Gruetzner “Nanometer patterning using ma-N series DUV negative photoresist and electron beam lithography“ Proc. SPIE () 485–491
[Yu] Q. Yu, S. Braswell, B. Christin, J. Xu, P. M. Wallace, H. Gong, D. Kaminsky “Surface-enhanced Raman scattering on gold quasi-3D nanostructure and 2D nanohole arrays” Nanotechnology 21 () (9pp)
ma-N 400/ ma-N :
[Voigt_2] A. Voigt, G. Gruetzner, E. Sauer, S. Helm, T. Harder, S. Fehlberg, J. Bendig „A series of AZ-compatible negative photoresists“ Proc. SPIE () 413–420
[Voigt_3] A. Voigt, M. Heinrich, K. Hauck, R. Mientus, G. Gruetzner, M. Töpper, O. Ehrmann „A Single Layer Negative Tone Lift-Off Photo Resist for Patterning a Magnetron Sputtered Ti/Pt/Au Contact System and for Solder Bumps“ Microelectron. Eng. 78 – 79 () 503 – 508
ma-N :
[Goeppl] M. Goeppl, A. Fragner, M. Baur, R. Bianchetti, S. Filipp, J. M. Fink, P. J. Leek, G. Puebla, L. Steffen, A. Wallraff „Coplanar Waveguide Resonators for Circuit Quantum Electrodynamics” J. Appl. Phys. 104, ()
[Lysko] J. M. Lysko, B. Latecki, M. Nikodem „Gas micro-fow-metering with the in-channel Pt resistors” J. of Telecommunications & Information Technology () 98
ma-N 400:
[Figi] H. Figi, M. Jazbinsek, C. Hunziker, M. Koechlin, P. Guenter „Electro-optic single-crystalline organic waveguides and nanowires grown from the melt” Optics Express Vol. 16, No. 15 ()
[Guo] H.C. Guo, D. Nau, A. Radke, X.P. Zhang, J. Stodolka, X.L. Yang, S.G. Tikhodeev, N.A. Gippius, H. Giessen “Large-area metallic photonic crystal fabrication with interference lithography and dry etching” Appl. Phys. B 81 () 271–275
Epocore/ Epoclad:
[Ceyssens] F. Ceyssens, M. Driesen, K. Wouters, R. Puers, K.U. Leuven „A low-cost and highly integrated fiber optical pressure sensor system” Sensors and Actuators A 145–146 () 81–86
[DeDockera] H.W.J.A. De Doncker, T. Guan, M. Driesen, R. Puers “Biaxial and Uniaxial Epoxy Accelerometers” Procedia Chemistry 1 () 572–575
[Driesen] M. Driesen, K. Wouters, R. Puers „Etch rate optimization in reactive ion etching of epoxy photoresists” Procedia Chemistry 1 () 796–799
[Gijsenbergh] P. Gijsenbergh, K. Wouters, K. Vanstreels, R. Puers “Determining the physical properties of EpoClad negative photoresist for use in MEMS applications” J. Micromech. Microeng. 21 () (6pp)
[Himmelhuber] R. Himmelhuber, M. Fink, K. Pfeiffer, U. Ostrzinski, A. Klukowska, G. Gruetzner, R. Houbertz, H. Wolter „Innovative materials tailored for advanced microoptic applications“ Proc- SPIE Vol. ()
[Wouters_1] K. Wouters, R. Puers “Determining the Young’s modulus and creep effects in three different photo definable epoxies for MEMS applications” Sensors and Actuators A 156 () 196–200
[Wouters_2] K. Wouters, H. De Doncker, R. Puers „Dynamic thermal mechanical characterization of Epoclad negative photoresist for micro mechanical structures” Microelectronic Engineering 87 () –
mr-DWL:
[Cadarso] V. J. Cadarso, K. Pfeiffer, U Ostrzinski, J. B. Bureau, G. A. Racine, A. Voigt, G. Gruetzner, J. Brugger “Direct writing laser of high aspect ratio epoxy microstructures” J. Micromech. Microeng. 21 () (6pp)
We strongly recommend to apply a release agent on the mould or stamp in order to generate a high adhesion contrast between mould or stamp and substrate. It is advisable to pre-treat the lithography mask, even if only a proximity lithography process is performed. The formed anti-sticking layer (ASL) prevents defects caused by sticking of the Hybrid Polymers on the mould/stamp. The most common release agent for silicon or silicon dioxide is “F13-TCS” (1H,1H,2H,2H-perfluorooctyl-trichlorosilane, CAS number [-45-9], available from common specialty chemicals suppliers).
The processing of F13-TCS for Si and SiO2 moulds is described in: S. Park, “Anti-adhesive layers on nickel stamps for nanoimprint lithography“, Microel. Eng. 73-74 (), 196-201; H. Schift et al., „Controlled co-evaporation of silanes for nanoimprint stamps“, Nanotechnology 16 (), 171-175.
OrmoClear®, OrmoCore and OrmoClad as well as many acrylic-based polymers form a so-called inhibition layer when exposed under ambient atmosphere. This is due to partial quenching of radical polymerization by oxygen which results in a 5–15 μm thick layer of uncured material on the surface (“inhibition layer”). It has to be washed away in a development step (e.g. with OrmoDev). However, OrmoComp®, OrmoClear®FX and OrmoStamp® are not sensitive to oxygen and do not form an inhibition layer.
When applying UV moulding or (nano)imprint with hard molds (e.g. Si-, SiO2-, Ni-molds) there is no formation of an inhibition layer. However, using PDMS-molds (acting as some kind of “oxygen sponge”) will result in the formation of an inhibition layer.
mr-NIL210 and mr-UVCur21 are UV-curable and liquid polymer systems for UV-based nanoimprint lithography. The spin-coated liquid films are cured by UV exposure at room temperature. There is no need for baking after the imprint step.
mr-NIL E is a curing resist for thermal nanoimprint lithography, which forms a solid film after spin coating and prebake. It exhibits a low glass transition temperature (Tg) of about 40 °C. Thus, it can be imprinted at temperatures as low as 80 – 100 °C. But this epoxy-based material has to be cured by UV exposure and baking (comparable to the post exposure bake of chemically amplified resists). Otherwise there would be a reflow of the imprinted patterns on subsequent annealing. Curing can beneficially be done during imprinting in the imprint tool (if the machine has an exposure unit).